GaN MMIC based T/R-module front-end for -band applications

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 274-277

  Schuh, P ^a   Sledzik, H ^a   Reber, R ^a   Fleckenstein, A ^a   Leberer, R ^a   Oppermann, M ^a   Quay, R ^b   Raay, F Van ^b   Eggebert, M Seelmann ^b   Kiefer, R ^b   Mikulla, M ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ARRAYS; ALGAN/GAN HEMT; HIGH POWER AMPLIFIER; LOW NOISE; LTCC TECHNOLOGY; MICROSTRIP TECHNOLOGY; MONOLITHICALLY INTEGRATED; OUTPUT POWER LEVELS; VIA-HOLE; X-BAND FREQUENCIES;

AUDIO FREQUENCY AMPLIFIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

MICROWAVE CIRCUITS;

EID: 66649120810     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772282     Document Type: Conference Paper

References (13)

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