Molecular simulation study of the structural properties in InxGa1-xAs alloys: Comparison between Valence Force Field and Tersoff potential models

Computational Materials Science

Volumn 43, Issue 4, 2008, Pages 616-622

  Adhikari, Jhumpa ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

InxGa1 xAs; Molecular simulation; Monte Carlo method; Tersoff potential; Valence Force Field model

Indexed keywords

ARSENIC COMPOUNDS; BOND LENGTH; CHLORINE COMPOUNDS; METALLIC COMPOUNDS;

COMPOUND SEMICONDUCTOR; INXGA1-XAS; MOLECULAR SIMULATION; MOLECULAR SIMULATIONS; MONTE CARLO METHOD; STRUCTURAL PROPERTIES; TERSOFF POTENTIAL; TERSOFF POTENTIALS; VALENCE FORCE FIELD MODEL;

SEMICONDUCTOR MATERIALS;

EID: 52949144954     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2008.01.005     Document Type: Article

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