Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography

Journal of Materials Research

Volumn 25, Issue 12, 2010, Pages 2292-2296

  Tanaka, Masaki ^a   Liu, Grace S ^b   Kishida, Tomonobu ^a,c   Higashida, Kenji ^a   Robertson, Ian M ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b University of Illinois at Urbana Champaign   (United States)

^c MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION LOOP; ELECTRON TOMOGRAPHY; HIGH VOLTAGE ELECTRON MICROSCOPY; INTERSTITIAL ATOMS; MATRIX; OXIDE PRECIPITATES; PRISMATIC DISLOCATION LOOP; SINGLE CRYSTAL SILICON; SLIP DISLOCATION;

ELECTRIC IMPEDANCE TOMOGRAPHY; ELECTRON MICROSCOPES; PRECIPITATES; SINGLE CRYSTALS;

DISLOCATIONS (CRYSTALS);

EID: 78649511012     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2010.0308     Document Type: Article

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