The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon

Computational Materials Science

Volumn 30, Issue 1-2 SPEC ISS., 2004, Pages 131-136

  Giannattasio, Armando ^a   Senkader, Semih ^a   Falster, Robert J ^a,b   Wilshaw, Peter R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ETCHING; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; NUCLEATION; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH; STRAIN; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

ANNULAR BENDING TECHNIQUES; ENERGY BARRIERS; GLIDE DISLOCATIONS; PRISMATIC DISLOCATION LOOPS;

SILICON WAFERS;

EID: 1942420820     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.01.021     Document Type: Conference Paper

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