High-Q FBARs using epitaxial AlN films

Proceedings - IEEE Ultrasonics Symposium

Volumn 1, Issue , 2006, Pages 1467-1470

  Krishnaswamy, S V ^a   Adam, J D ^a   Aumer, M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; ELECTRODE LOSS; EPITAXIAL ALN; FABRICATION PROCESS; FILM BULK ACOUSTIC RESONATORS; FILM ROUGHNESS; HIGH-CRYSTALLINE QUALITY; PHASED ARRAY MODULES; PIEZOELECTRIC COUPLINGS; RF FILTERING; SIC SUBSTRATES; SINGLE-CRYSTAL FILMS; SPUTTERED FILMS; WIDE BAND GAP;

ACOUSTIC RESONATORS; EPITAXIAL FILMS; GALLIUM NITRIDE; RESONATORS; SILICON CARBIDE; SINGLE CRYSTALS;

ACOUSTIC SURFACE WAVE FILTERS;

EID: 78649389985     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2006.369     Document Type: Conference Paper

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