Melting of single-walled silicon carbide nanotubes: Density functional molecular dynamics simulation

Chinese Physics Letters

Volumn 27, Issue 10, 2010, Pages

  Wang, S J ^a   Zhang, C L ^a   Wang, Z G ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR DYNAMICS; NANOTUBES; OPTOELECTRONIC DEVICES; POINT DEFECTS; SILICON CARBIDE; YARN;

DENSITY FUNCTIONALS; HIGH MELTING; MELTING BEHAVIOR; NANOSCALE ELECTRONIC DEVICES; NANOTUBE DENSITY; SIC NANOTUBES; SILICON CARBIDE NANOTUBES; SINGLE-WALLED; STONE-WALES DEFECTS; THERMALLY ACTIVATED;

MELTING POINT;

EID: 78649377243     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/10/106101     Document Type: Article

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