Atomic-level study of melting behavior of GaN nanotubes

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Wang, Zhiguo ^a   Zu, Xiaotao ^a   Gao, Fei ^b   Weber, William J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FACETS; MELTING TEMPERATURE; STILLINGER-WEBER POTENTIAL;

ATOMIC PHYSICS; COMPUTER SIMULATION; GALLIUM NITRIDE; MELTING; MOLECULAR DYNAMICS; SINGLE CRYSTALS;

NANOTUBES;

EID: 33749316967     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345616     Document Type: Article

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