First principles study of aluminium vacancy in wurtzite aluminium nitride

Chinese Physics Letters

Volumn 25, Issue 8, 2008, Pages 2989-2992

  Gao, Ting Ge ^a   Yi, Jue Min ^a   Zhou, Zi Yao ^a   Hu, Xiao Dong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CALCULATIONS; ENERGY GAP; GROUND STATE; III-V SEMICONDUCTORS; MAGNETIC MOMENTS; VACANCIES;

ALN; ANTIFERROMAGNETIC COUPLING; DRIVING FORCES; FIRST-PRINCIPLE STUDY; IMPURITY LEVEL; INTRINSIC SYMMETRIES; SPIN PROPERTIES; SPIN SPLITTINGS; WURTZITE ALUMINUM NITRIDE;

ZINC SULFIDE;

EID: 49749086883     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/8/069     Document Type: Article

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