Surface structure and electronic property of InP(001)-(2×1)S surface: A first-principles study

Chinese Physics Letters

Volumn 27, Issue 4, 2010, Pages

  Li, Deng Feng ^a,b   Xiao, Hai Yan ^b   Xue, Shu Wen ^b   Yang, Li ^b   Zu, Xiao Tao ^b  

^a CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

FIRST-PRINCIPLE STUDY; FIRST-PRINCIPLES SIMULATIONS; RICH CONDITIONS; STABLE STRUCTURES;

SURFACE STRUCTURE;

EID: 77950553467     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/4/046802     Document Type: Article

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