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Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet

(5) Ben Sedrine, N a,b Bouhafs, C b Harmand, J C c Chtourou, R b Darakchieva, V a,d

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b Centre de Recherches et des Technologies de l'Energie (Tunisia)

c UNIV PARIS SUD (France)

d LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ANTI-CROSSING MODELS; COMPOSITIONAL DEPENDENCE; CRITICAL POINTS; DIELECTRIC FUNCTIONS; ENERGY RANGES; GAAS; LOWER ENERGIES; N CONTENT; NEAR INFRARED; TRANSITION SHIFTS;

GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ELLIPSOMETRY;

NITROGEN;

EID: 78649302227 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3518479 Document Type: Article

Times cited : (16)

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