메뉴 건너뛰기




Volumn 97, Issue 20, 2010, Pages

FePdB layer for perpendicular magnetic tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY LAYERS; DOUBLE BARRIERS; MAGNETIC TUNNEL JUNCTION; MIDDLE LAYER; PERPENDICULAR MAGNETIC ANISOTROPY; POST ANNEALING; TUNNEL MAGNETORESISTANCE; UNDERLAYERS;

EID: 78649292870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3517482     Document Type: Article
Times cited : (21)

References (20)
  • 3
    • 42149099347 scopus 로고    scopus 로고
    • Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
    • DOI 10.1063/1.2840016
    • H. Ohmori, T. Hatori, and S. Nakagawa, J. Appl. Phys. 0021-8979 103, 07A911 (2008). 10.1063/1.2840016 (Pubitemid 351538121)
    • (2008) Journal of Applied Physics , vol.103 , Issue.7
    • Ohmori, H.1    Hatori, T.2    Nakagawa, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.