Design of highly efficient load modulation transmitter for wideband cellular applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 11 PART 1, 2010, Pages 2820-2828

  Nemati, Hossein Mashad ^a   Cao, Haiying ^a   Almgren, Björn ^b   Eriksson, Thomas ^a   Fager, Christian ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ERICSSON RESEARCH   (Sweden)

Author keywords

4G; Digital predistortion (DPD); efficiency; GaN HEMT; LDMOS FET; linearization; load modulation; LTE; power amplifier (PA)

Indexed keywords

4G; DIGITAL PREDISTORTION; GAN HEMTS; LDMOS FET; LOAD MODULATION; LTE;

BANDWIDTH; DESIGN; DYNAMIC LOADS; GALLIUM ALLOYS; GALLIUM NITRIDE; LAGRANGE MULTIPLIERS; LINEARIZATION; MESFET DEVICES; MOBILE TELECOMMUNICATION SYSTEMS; MOS DEVICES; POWER AMPLIFIERS; SUPERCONDUCTING MATERIALS; TRANSMITTERS;

MODULATION;

EID: 78549269072     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2077914     Document Type: Article

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