A high-efficiency 100-W GaN three-way Doherty amplifier for base-station applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 7, 2008, Pages 1582-1591

  Pelk, Marco J ^a,b   Neo, W C Edmund ^a,b   Gajadharsing, John R ^a,c   Pengelly, Raymond S ^a,d   De Vreede, Leo C N ^a,b  

^a IEEE

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c NXP SEMICONDUCTORS   (Netherlands)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

Base station; Doherty; High efficiency; Mixed signal; Power amplifier; Predistortion; Universal Mobile Telecommunications System (UMTS); Wideband code division multiple access (W CDMA)

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; MOBILE TELECOMMUNICATION SYSTEMS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; TELECOMMUNICATION SYSTEMS; TELEPHONE SYSTEMS;

ACCURATE DESIGN; BASE STATION (BS); CREST FACTORS; DOHERTY AMPLIFIERS; HIGH EFFICIENCY; HIGH POWERS; MIXED SIGNALS; OPTIMIZE EFFICIENCY; OUTPUT POWERS; POWER BACK-OFF (PBO); TEST SIGNALS; UNIVERSAL MOBILE TELECOMMUNICATIONS SYSTEM (UMTS); WIDE-BAND CODE DIVISION MULTIPLE ACCESS (W-CDMA);

WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 47649105995     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.924364     Document Type: Article

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