High-efficiency WCDMA envelope tracking base-station amplifier implemented with GaAs HVHBTs

IEEE Journal of Solid-State Circuits

Volumn 44, Issue 10, 2009, Pages 2629-2639

  Jeong, Jinseong ^a   Kimball, Donald F ^c   Kwak, Myoungbo ^a   Draxler, Paul ^a,b   Hsia, Chin ^a   Steinbeiser, Craig ^d   Landon, Thomas ^d   Krutko, Oleh ^d   Larson, Lawrence E ^a   Asbeck, Peter M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b QUALCOMM INC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Base station power amplifier; Digital pre distortion; Efficiency; Envelope tracking; GaAs HVHBT; Linearity; Memory mitigation; Peak to average power ratio; WCDMA; WiMAX

Indexed keywords

BASE-STATION POWER AMPLIFIER; DIGITAL PRE-DISTORTION; ENVELOPE TRACKING; GAAS HVHBT; LINEARITY; MEMORY MITIGATION; PEAK-TO-AVERAGE POWER RATIO; WCDMA;

GALLIUM ALLOYS; INSTRUMENT SCALES; INTEROPERABILITY; LINEARIZATION; MOS DEVICES; MULTICARRIER MODULATION; POWER AMPLIFIERS; POWER CONTROL; SEMICONDUCTING GALLIUM; WIMAX;

BROADBAND AMPLIFIERS;

EID: 70350602574     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2009.2026845     Document Type: Article

References (22)

1. S. C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 2006.
2. F. H. Raab, P. Asbeck, S. Cripps, P. B. Kenington, Z. B. Popovic, N. Pothecary, J. F. Sevic, and N. O. Sokal, "Power amplifiers and transmitters for RF and microwave," IEEE Trans. Microw. Theory Tech., vol.50, no.3, pp. 814-826, Mar. 2002.
3. H. Brech, W. Brakensiek, D. Burdeaux, W. Burger, C. Dragon, G. Formicone, B. Pryor, and D. Rice, "Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base-station," in Proc. IEEE IEDM, Washington, DC, Dec. 2003, pp. 359-362.
4. W. Burger, H. Brech, D. Burdeaux, C. Dragon, G. Formicone, M. Honan, B. Pryor, and X. Ren, "RF-LDMOS: A device technology for high power RF infrastructure applications," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Oct. 2004, pp. 189-192.
5. P.Kurpas, F. Brunner, R. Doerner, B. Janke, P. Heymann, A. Maasdorf, W. Doser, P. Auxemery, H. Blanck, D. Pons, J. Wuri, and W. Heinrich, "High-voltage GaAs power-HBTs for base-station amplifier," in Proc. IEEE MTT-S Int. Microw. Symp., Phoenix, AZ, May 2001, pp. 633-636.
6. T. Henderson, J. Hitt, and K. Campman, "High reliability high voltage HBTs operating up to 30 V," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Oct. 2004, pp. 67-70.
7. F. H.-F. Chau, B. J.-F. Lin, Y. Chen, M. Kretschmar, C.-P. Lee, N. l. L. Wang, X. Sun, W. Ma, S. Xu, and P. Hu, "Reliability study of InGap/ GaAs HBT for 28 V operation," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Nov. 2006, pp. 191-194.
8. M. Nagahara, K. Inoue, S. Sano, H. Takahashi, and S. Takase, "A 28 V 250 W GaAs power FET with high gain of 15.5 dB for W-CDMA base-stations," in Proc. IEEE MTT-S Int. Microw. Symp., Fort Worth, TX, Jun. 2004, pp. 1359-1362.
9. K. Inoue, M. Nagahara, N. Ui, H. Haematsu, S. Sano, and J. Fukaya, "A high gain L-band GaAs FET technology for 28 V operation," in Proc. IEEE MTT-S Int. Microw. Symp., FortWorth, TX, Jun. 2004, pp. 821-824.
10. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa, "A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base-station applications," in Proc. IEEE IEDM, Washington, DC, Dec. 2003, pp. 633-636.
11. W. Nagy, S. Singhal, R. Borges, J. W. Johnson, J. D. Brown, R. Therrien, A. Chaudhari, A. W. Hanson, J. Riddle, S. Booth, P. Rajagopal, E. L. Piner, and K. J. Linthicum, "150WGaN-on-Si RF power transistor," in Proc. IEEE MTT-S Int. Microw. Symp., Long Beach, CA, Jun. 2005, pp. 483-486.
12. C. Steinbeiser, T. Landon, C. Suckling, J. Nelson, J. Delaney, J. Hitt, L. Witkowski, G. Burgin, R. Hajji, and O. Krutko, "250 W HVHBT Doherty with 57%WCDMAefficiency linearized to 55 dBc for 2c11 6.5 dB par," IEEE J. Solid-State Circuits, vol.43, no.10, pp. 2218-2228, Oct. 2008.
13. C. Steinbeiser, T. Landon, and C. Suckling, "250 W HVHBT Doherty with 57% WCDMA efficiency linearized to 55 dBc for 2c11 6.5 dB PAR," in Proc. IEEE Compound Semicond. Integr. Circuit Symp.,Monterey, CA, Oct. 2007, pp. 1-4.
14. P. Draxler, S. Lanfranco, D. Kimball, C. Hsia, J. Jeong, J. van de Sluis, and P. Asbeck, "High efficiency envelope tracking LDMOS power amplifier for W-CDMA," in Proc. IEEE MTT-S Int. Microw. Symp., San Francisco, CA, Jun. 2006, pp. 1534-1537.
15. C. Hsia, D. Kimball, P. Draxler, J. J. Yan, J. Kinney, E. Toulouse, J. Wood, and P. M. Asbeck, "High efficiency envelope tracking overdriven class-A LDMOS power amplifier for base station applications," presented at the IEEE Topical Symp. Power Amplifiers for Wireless Commun., Orlando, FL, Jan. 2008.
16. D. Kimball, P. Draxler, J. Jeong, C. Hsia, S. Lanfranco, W. Nagy, K. Linthicum, L. Larson, and P. Asbeck, "50% PAE WCDMA base station amplifier implemented with GaN HFET," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Palm Springs, CA, Oct. 2005, pp. 89-92.
17. D. F. Kimball, J. Jeong, C. Hsia, P. Draxler, S. Lanfranco, W. Nagy, K. Linthicum, L. E. Larson, and P. M. Asbeck, "High-efficiency envelopetracking W-CDMA base-station amplifier using GaN HFETs," IEEE Trans. Microw. Theory Tech., vol.54, no.11, pp. 3848-3856, Nov. 2006.
18. J. Jeong, D. F. Kimball, M. Kwak, P. Draxler, C. Hsia, and P. M. Asbeck, "Harmonic optimization of RF power amplifiers for envelope tracking WCDMA base-station applications," presented at the IEEE Topical Symp. Power Amplifiers for Wireless Commun., San Diego, CA, Jan. 2009.
19. A. Zhu, P. Draxler, C. Hsia, T. Brazil, D. Kimball, and P. Asbeck, "Digital predistortion for envelope-tracking power amplifiers using decomposed piecewise Volterra series," IEEE Trans. Microw. Theory Tech., vol.56, no.10, pp. 2237-2247, Oct. 2008.
20. F. Wang, D. F. Kimball, J. D. Popp, A. H. Yang, D. Y. Lie, P. M. Asbeck, and L. E. Larson, "An improved power-added efficiency 19-dBm hybrid envelope elimination and restoration power amplifier for 802.11g WLAN applications," IEEE Trans. Microw. Theory Tech., vol.54, no.12, pp. 4086-4099, Dec. 2006.
21. F.Wang, A. Ojo, D. F. Kimball, P. M. Asbeck, and L. E. Larson, "Envelope tracking power amplifier with pre-distortion for WLAN 802.11g," in Proc. IEEE MTT-S Int. Microw. Symp., Fort Worth, TX, Jun. 2004, pp. 1543-1546.
22. P. Draxler, J. Deng, D. Kimball, I. Langmore, and P. M. Asbeck, "Memory effect evaluation and predistortion of power amplifiers," in Proc. IEEE MTT-S Int. Microw. Symp., Long Beach, CA, Jun. 2005, pp. 1549-1552.