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Applied Physics Express

Volumn 3, Issue 10, 2010, Pages

Amorphous indium gallium zinc oxide thin-film transistors fabricated by direct transfer printing

(2) Adachi, Susumu a Okamura, Shoichi a

a SHIMADZU CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT TRANSFER; FIELD-EFFECT MOBILITIES; GATE METALS; GLASS SUBSTRATES; INDIUM GALLIUM ZINC OXIDES; MEASURED CURRENTS; ON/OFF CURRENT RATIO; POLYDIMETHYLSILOXANE PDMS; SILICON DIOXIDE; SUBTHRESHOLD SLOPE;

AMORPHOUS FILMS; GALLIUM; INDIUM; PRINTING; SILICA; SILICON OXIDES; SUBSTRATES; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78549265473 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.104101 Document Type: Article

Times cited : (6)

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