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Volumn 50, Issue 2, 2010, Pages 780-789

Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic orientations

Author keywords

Density functional theory; Effective mass; Electronic structure; Semiconductor nanowire

Indexed keywords

AB INITIO STUDY; AXIS ORIENTATION; BAND ENERGY; BAND-EDGE PHOTOLUMINESCENCE; BOUNDARY POINTS; BRILLOUIN ZONES; BULK COUNTERPART; CRYSTALLOGRAPHIC AXES; CRYSTALLOGRAPHIC ORIENTATIONS; EFFECTIVE MASS; ELECTRONIC BAND; EXPERIMENTAL DETERMINATION; FIRST-PRINCIPLES; INAS; LATERAL SIZES; NONLOCAL; OPTOELECTRONIC APPLICATIONS; ORBITAL ENERGY; POLARIZATION RATIOS; PSEUDOPOTENTIAL THEORY; SEMICONDUCTOR NANOWIRE; TRANSITION INTENSITY; TWO DIRECTIONS; VALENCE STATE; ZINC-BLENDE;

EID: 78449242692     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2010.10.011     Document Type: Article
Times cited : (4)

References (57)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.