Recombination dynamics of deep defect states in zinc oxide nanowires

Nanotechnology

Volumn 20, Issue 17, 2009, Pages

  Lettieri, S ^a   Santamaria Amato, L ^a   Maddalena, P ^a   Comini, E ^b   Baratto, C ^b   Todros, S ^b  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIMOLECULAR RECOMBINATION COEFFICIENTS; DEEP DEFECTS; DEFECT CONCENTRATIONS; DEFECT STATE; DIRECT-GAP SEMICONDUCTORS; EXPONENTIAL DECAYS; EXPONENTIAL FITTINGS; GENERAL EXPRESSIONS; INTERBAND RECOMBINATIONS; NON-RADIATIVE RECOMBINATIONS; RECOMBINATION DYNAMICS; SECOND-ORDER APPROXIMATIONS; SIMILAR ANALYSIS; STATE CONCENTRATIONS; TIME-RESOLVED PHOTOLUMINESCENCES; TWO CHANNELS; UNIMOLECULAR; VISIBLE EMISSIONS; ZINC OXIDE NANOWIRES;

DEFECTS; DYNAMICS; ELECTRIC WIRE; EPITAXIAL GROWTH; NANOWIRES; PHOTOLUMINESCENCE; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

NANOWIRE; ZINC OXIDE;

ARTICLE; CONCENTRATION (PARAMETERS); LIFESPAN; MOLECULAR MECHANICS; MOLECULAR MODEL; PHOTOLUMINESCENCE; PRIORITY JOURNAL; RADIATION; SEMICONDUCTOR; SYNTHESIS;

EID: 65149103595     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/17/175706     Document Type: Article

References (31)

1. Ozgur U, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
2. Ellmer K, Klein A and Rech B 2008 Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells (Berlin: Springer)
3. Chichibu S F, Onuma T, Kubota M, Uedono A, Sota T, Tsukazaki A, Ohtomo A and Kawasaki M 2006 J. Appl. Phys. 99 093505
4. Wang Z L 2004 J. Phys.: Condens. Matter 16 R829-58
5. Gruzintsev A N, Red'kin A N, Makovei Z I and Barthou C 2007 Inorg. Mater. 43 1080-4
6. Djurisic A B and Leung Y H 2006 Small 2 994
7. Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E and Cantwell G 2002 Appl. Phys. Lett. 81 662
8. Heo Y H, Norton D P and Pearton S J 2005 J. Appl. Phys. 98 073502
9. Lin B, Fu Z and Jia Y 2001 Appl. Phys. Lett. 79 943
10. Djurisic A B et al 2007 Nanotechnology 18 095702
11. Ong H C and Du G T 2004 J. Cryst. Growth 265 471
12. Shalish I, Temkin H and Narayanamurti V 2004 Phys. Rev. B 69 245401
13. Kaur M, Bhattacharya S, Roy M, Deshpande S K, Sharma P, Gupta S and Yakhmi J V 2007 Appl. Phys. A 87 91-6
14. Lettieri S, Setaro A, Baratto C, Comini E, Faglia G, Sberveglieri G and Maddalena P 2008 New. J. Phys. 10 043013
15. Comini E, Baratto C, Faglia G, Ferroni M and Sberveglieri G 2007 J. Phys. D: Appl. Phys. 40 7255-9
16. Jung S W, Park W I, Cheong H D, Yi G-C, Jang H M, Hong S and Joo T 2002 Appl. Phys. Lett. 80 1924-6
17. Williams G and Watts D C 1970 Trans. Faraday Soc. 66 80
18. Margueron S H and Clarke D R 2007 J. Am. Ceram. Soc. 90 1798-801
19. Kwok K W, Leung Y H, Djuresic A B, Chan W K and Philips D L 2005 Appl. Phys. Lett. 87 093108
20. Kwok K W, Djuresic A B, Leung Y H, Chan W K and Philips D L 2005 Appl. Phys. Lett. 87 223111
21. Beeb H B and Williams E W 1993 Photoluminescence: theory Semiconductors and Semimetals vol 8 Transport and Optical Phenomena ed R K Willardson, A C Beer and E R Weber (New York: Academic)
22. Ahrenkiel K 1993 Minority carrier lifetime in III-V semiconductors Semiconductors and Semimetals vol 39 Minority Carriers in III-V Semiconductors ed R K Willardson, A C Beer and E R Weber (New York: Academic)
23. Grove A S 1967 Physics and Technology of Semiconductor Devices (New York: Wiley)
24. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley-Interscience)
25. Lettieri S, Santamaria L and Maddalena P 2009 unpublished results
26. Hwang C J 1971 J. Appl. Phys. 42 4408
27. Landsberg P T 1991 Recombination in Semiconductors (Cambridge: Cambridge University Press)
28. Stern F 1976 J. Appl. Phys. 47 5382
29. t'Hooft G W 1981 Appl. Phys. Lett. 39 389
30. Hwang C J and Dyment J C 1973 J. Appl. Phys. 44 3240
31. Lettieri S, Caus M, Setaro A, Trani F, Barone V, Ninno D and Maddalena P 2008 J. Chem. Phys. 129 244710