Temperature dependence of the photoluminescence from InP/GaAs type-II ultrathin quantum wells

Journal of Physics D: Applied Physics

Volumn 43, Issue 45, 2010, Pages

  Singh, S D ^a   Porwal, S ^a   Alexander, K ^a   Dixit, V K ^a   Srivastava, A K ^a   Oak, S M ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS; BAND GAPS; EMPIRICAL RELATIONS; FITTING PARAMETERS; GAAS; GAAS BARRIERS; INP; PEAK ENERGY; PHOTOLUMINESCENCE SPECTRUM; PL INTENSITY; QUENCHING MECHANISMS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; THERMAL ESCAPE; ULTRA-THIN; ULTRA-THIN QUANTUM WELLS;

GALLIUM ALLOYS; GALLIUM ARSENIDE; MONOLAYERS; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING GALLIUM; STATISTICAL MECHANICS; TEMPERATURE DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78249241555     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/45/455410     Document Type: Article

References (25)

1. Wang B and Chua S J 2001 Appl. Phys. Lett. 78 628
2. Bahng J H, Moon S J, Lee K H, Choi J C, Jeong K and Park H L 2004 Appl. Phys. Lett. 84 3870
3. Baier T, Mantz U, Thonke K, Sauer R, Schaffier F and Herzog H J 1994 Phys. Rev. B 50 15191
4. Alonso-Alvarez D, Alen B, Garcia J M and Ripalda J M 2007 Appl. Phys. Lett. 91 263103
5. Geller M, Kapteyn C, Muller-Kirsch L, Heitz R and Bimberg D 2003 Appl. Phys. Lett. 82 2706
6. Laghumavarapu R B, Moscho A, Khoshakhlagh A, El-Emawy M, Lester L F and Huffaker D L 2007 Appl. Phys. Lett. 90 173125
7. Ribeiro E, Govorov A O, Carvalho W Jr and Medeiros-Ribeiro G 2004 Phys. Rev. Lett. 92 126402
8. Sengupta D K et al 1996 Appl. Phys. Lett. 69 3209
9. Singh S D, Porwal S, Sharma T K and Rustagi K C 2006 J. Appl. Phys. 99 063517
10. Godoy M P F et al 2007 J. Appl. Phys. 101 073508
11. Gerling M, Pistol M E and Seifert W 1998 Physica E 2 794
12. Bansal B, Godefroo S, Hayne M, Medeiros-Ribeiro G and Moshchalkov V V 2009 Phys. Rev. B 80 205317
13. Pickenhain R, Schmidt H and Gottschach V 2000 J. Appl. Phys. 88 948
14. Lanacer A, Chabot J F, Cote M, Leonelli R, Frankland D and Masut R A 2005 Phys. Rev. B 72 075349
15. Toropov A A et al 2004 Phys. Rev. B 70 205314
16. Singh S D, Dixit V K, Porwal S, Kumar R, Srivastava A K, Ganguli T, Sharma T K and Oak S M 2010 Appl. Phys. Lett. 97 111912
17. Hudait M K, Modak P, Hardikar S and Krupanidhi S B 1998 J. Appl. Phys. 83 4454
18. Allen P B and Cardona M 1981 Phys. Rev. B 23 1495
19. Kangarlu A, Chandrasekhar H R, Chandrasekhar M, Kapoor Y M, Chambers F A, Vojak B A and Meese J M 1988 Phys. Rev. B 37 1035
20. Chang W H, Liao Y A, Hsu W T, Lee M C, Chiu P C and Chyi J I 2008 Appl. Phys. Lett. 93 033107
21. Bansal B, Dixit V K, Venkatraman V and Bhat H L 2003 Appl. Phys. Lett. 82 4720
22. Lautenschlager P, Garriga M and Cardona M 1987 Phys. Rev. B 36 4813
23. Pässler R 2002 Phys. Rev. B 66 085201
24. Chi W S, Huang Y S, Qiang H, Pollak F H, Pettit D G and Woodall J M 1994 Japan. J. Appl. Phys. Part 1 33 966
25. Potter R J and Balkan N 2004 J. Phys.: Condens. Matter 16 S3387