Type-II interband transition of ZnS0.78Te0.22/ZnTe single quantum wells

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3870-3872

  Bahng, Jae Ho ^a   Moon, S J ^b   Lee, K H ^b   Choi, J C ^b   Jeong, K ^b   Park, H L ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); ENERGY GAP; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; PHOTODIODES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; ZINC SULFIDE;

BAND DIAGRAMS; CONDUCTION BANDS; QUANTUM STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2942543241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1728306     Document Type: Article

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