Characterization of zinc oxide and pentacene thin film transistors for CMOS inverters

IEICE Transactions on Electronics

Volumn E91-C, Issue 12, 2008, Pages 1843-1847

  Iechi, Hiroyuki ^a,b   Watanabe, Yasuyuki ^b   Yamauchi, Hiroshi ^b   Kudo, Kazuhiro ^b  

^a RICOH COMPANY LTD   (Japan)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

Cmos inverter; Field effect transistor; Interface; Organic logic circuit; Pentacene; Sputter; Zinc oxide

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FLEXIBLE DISPLAYS; INTERFACE STATES; INTERFACES (MATERIALS); METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; RADIO FREQUENCY IDENTIFICATION (RFID); SEMICONDUCTING ORGANIC COMPOUNDS; SPUTTERING; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

CMOS INVERTERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FIELD-EFFECT MOBILITIES; ORGANIC LOGIC; PENTACENE FIELD EFFECT TRANSISTORS; PENTACENE THIN FILM TRANSISTORS; PENTACENES; THIN-FILM TRANSISTOR (TFTS);

THIN FILM CIRCUITS;

EID: 67650067291     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.12.1843     Document Type: Article

References (17)

1. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greenning, J. Frank, and J. West, "Organic thin-film transistor-driven polymerdispersed liquid crystal display on flexible polymeric substrates, " Appl. Phys. Lett., vol. 80, no. 6, pp. 1088-1090, Feb. 2002.
2. Z. T. Zhu, J. T. Mason, R. Dieckmann, and G. G. Malliaras, "Humidity sensors based on pentacene thin-film transistors, " Appl. Phys. Lett., vol. 81, no. 24, pp. 4643-4645, Dec. 2002.
3. B. K. Crone, A. Dodabalapur, R. Sarpeshkar, A. Gelperin, H. E. Katz, and Z. Bao, "Organic oscillator and adaptive circuits for chemical vapor sensing, " J. Appl. Phys., vol. 91, no. 12, pp. 10140-1-10140-7, June 2002.
4. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelly, D. V. Muyres, and S. D. Theiss, "Pentacene-based radio-frequency identification circuitry, " Appl. Phys. Lett., vol. 82, no. 22, pp. 3964-3966, June 2003.
5. Y. Kato, S. Iba, R. Teramoto, T. Sekitani, H. Kawaguchi, T. Someya, H. Kawaguchi, and T. Sakurai, "High mobility of pentacene fieldeffect transistors with polyimide gate dielectric layers, " Appl. Phys. Lett., vol. 84, no. 19, pp. 3789-3791, May 2004.
6. J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Shimoda, and S. Ogawa, "Very high-mobility organic single-crystal transistors with in-crystal conduction channels, " Appl. Phys. Lett., vol. 90, pp. 102120-1-102120-3, March 2007.
7. A. Dodabalapur, J. Baumbach, K. Baldwin, and H. E. Katz, "Hybrid organic/inorganic complementary circuits, " Appl. Phys. Lett., vol. 68, no. 16, pp. 2246-2248, Feb. 1996.
8. A. Dodabalapur, J. Laquindanum, H. E. Katz, and Z. Bao, "Complementary circuits with organic transistors, " Appl. Phys. Lett., vol. 69, no. 27, pp. 4227-4229, Oct. 1996.
9. H. Klark, D. J. Gundlach, and T. N. Jackson, "Fast organic thinfilm transistor circuits, " IEEE Electron Device Lett., vol. 20, no. 6, pp. 289-291, June 1999.
10. Y. Inoue, Y. Sakamato, T. Suzuki, M. Kobayashi, Y. Gao, and S. Tokito, "Organic thin-film transistors with high electron mobility based on perfluoropentacene, " Jpn. J. Appl. Phys., vol. 44, no. 6A, pp. 3663-3668, June 2005.
11. Y. Ohya, T. Niwa, T. Ban, and Y. Takahashi, "Thin film transistor of ZnO fabricated by chemical solution deposition, " Jpn. J. Appl. Phys., vol. 40, Part 1, no. 1, pp. 297-298, Jan. 2001.
12. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, "Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor, " Science, vol. 300, no. 5623, pp. 1269-1272, May 2003.
13. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors, " Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003.
14. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering, " Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1119, Feb. 2003.
15. J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Onho, and M. Kawasaki, "High mobility thin-film transistors with transparent ZnO channels, " Jpn. J. Appl. Phys., vol. 42, no. 4A, pp. 347-349, April 2003.
16. H. Iechi, Y. Watanabe, and K. Kudo, "Inverter circuits with pentacene and ZnO transistors, " Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2645-2649, April 2007.
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley Interscience Publication, 1981.