Solution-processed zinc oxide as high-performance air-stable electron injector in organic Ambipolar light-emitting field-effect transistors

Advanced Functional Materials

Volumn 20, Issue 20, 2010, Pages 3457-3465

  Gwinner, Michael C ^a   Vaynzof, Yana ^a   Banger, Kulbinder K ^a   Ho, Peter K H ^b   Friend, Richard H ^a   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

electron injection; light emitting transistors; organic field effect transistors; zinc oxide

Indexed keywords

AIR-STABLE; AMBIPOLAR; BENZOTHIADIAZOLES; DEPOSITED METAL; ELECTRON INJECTORS; ELECTRON-INJECTION BARRIER; GOLD ELECTRODES; GOLD SOURCE; HIGH-RESOLUTION PATTERNING; HOLE-INJECTING; INJECTION LAYERS; LIGHT EMISSION INTENSITY; LIGHT-EMITTING TRANSISTORS; LOW TEMPERATURES; METAL OXIDES; ORDERS OF MAGNITUDE; ORGANIC SEMICONDUCTOR; PATTERNED LAYERS; PROCESSING TEMPERATURE; SOLUTION-PROCESSED; SOURCE-DRAIN ELECTRODES; TRANSISTOR PERFORMANCE; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; ZNO;

ELECTRODES; ELECTRON INJECTION; ELECTRONS; EMISSION SPECTROSCOPY; FIELD EFFECT TRANSISTORS; GOLD; GOLD COATINGS; LIGHT EMISSION; METALLIC COMPOUNDS; PHOTOLITHOGRAPHY; POWER SUPPLY CIRCUITS; PROCESSING; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC; ZINC OXIDE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 78149422497     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201000785     Document Type: Article

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