In situ Raman analysis of a bulk GaN-based Schottky rectifier under operation

Journal of Electronic Materials

Volumn 39, Issue 10, 2010, Pages 2237-2242

  Xu, Hui ^a   Alur, Siddharth ^a   Wang, Yaqi ^a   Cheng, An Jen ^a   Kang, Kilho ^a   Sharma, Yogeshkumar ^a   Park, Minseo ^a   Ahyi, Claude ^a   Williams, John ^a   Gu, Chaokang ^a   Hanser, Rew ^b   Paskova, Tanya ^b   Preble, Edward A ^b   Evans, Keith R ^b   Zhou, Yi ^c  

^a AUBURN UNIVERSITY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

GaN; Raman spectroscopy; Schottky rectifier

Indexed keywords

A-THERMAL; FORWARD BIAS; GAN; GAN SUBSTRATE; HYDRIDE VAPOR PHASE EPITAXY; IN-SITU; MICRO RAMAN SPECTROSCOPY; MULTI-LAYERED; PIEZO-ELECTRIC EFFECTS; RAMAN PEAK; RAMAN PEAK SHIFTS; RAMAN SPECTRA; SCHOTTKY; SCHOTTKY DIODES; SCHOTTKY RECTIFIERS; SHIFT-AND; THERMAL CHARACTERISTICS;

CARRIER CONCENTRATION; ELECTRIC RECTIFIERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; OHMIC CONTACTS; PIEZOELECTRICITY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES;

GALLIUM ALLOYS;

EID: 78149415962     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1304-3     Document Type: Article

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