Chemical trend of Fermi-level shift in transition metal-doped TiO 2 films

Journal of the Ceramic Society of Japan

Volumn 118, Issue 1383, 2010, Pages 993-996

  Matsumoto, Yuji ^a   Katayama, Masao ^a   Abe, Takatoshi ^a   Ohsawa, Takeo ^a   Ohkubo, Isao ^a   Kumigashira, Hiroshi ^b   Oshima, Masaharu ^b   Koinuma, Hideomi ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Combinatorial laser MBE; Impurity doping; Photoemission; Synchrotron radiation; Titanium dioxide; Transition metal; X ray absorption spectroscopy

Indexed keywords

BINDING ENERGY; CHARGE TRANSFER; COBALT; CRYSTAL IMPURITIES; FERMI LEVEL; FILM THICKNESS; MANGANESE; OXIDE MINERALS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SYNCHROTRON RADIATION; TITANIUM DIOXIDE; TRANSITION METALS; X RAY ABSORPTION SPECTROSCOPY;

CHEMICAL TREND; EFFECT OF DOPING; EFFECTIVE CHARGE; EXCESS ELECTRONS; FERMI-LEVEL SHIFTS; IMPURITY DOPING; LASER MBE; SINGLE CRYSTAL SUBSTRATES;

DOPING (ADDITIVES);

EID: 78149348426     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.118.993     Document Type: Article

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