Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Kitamura, M ^a   Ohkubo, I ^a   Matsunami, M ^a   Horiba, K ^a,b   Kumigashira, H ^a,b   Matsumoto, Y ^c   Koinuma, H ^a,d   Oshima, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION-BAND MINIMUM; EPITAXIAL THIN FILMS; MN 3D STATE; OPTICAL GAP; OPTICAL SPECTRA; OPTICAL SPECTROSCOPY; STRUCTURE CHARACTERIZATION; VALENCE STATE; VALENCE-BAND MAXIMUMS; X-RAY ABSORPTION SPECTRUM;

ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; MANGANESE; MANGANESE COMPOUNDS; OPTICAL CONDUCTIVITY; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SPECTRUM ANALYSIS; SYNCHROTRON RADIATION; SYNCHROTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY;

EID: 67649989372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159826     Document Type: Article

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