Control of the leakage current in SrTiO3 films by acceptor doping

Journal of Materials Science

Volumn 33, Issue 5, 1998, Pages 1239-1242

  Paek, S H ^a   Lee, E S ^a   Kim, S H ^a   Seong, J Y ^a   Mah, J P ^b   Park, C S ^c   Choi, J S ^d   Jung, J H ^d  

^a Hanyang University   (South Korea)

^b Honam University   (South Korea)

^c Hanseo University   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; COMPOSITION EFFECTS; CURRENT DENSITY; DOPING (ADDITIVES); IRON; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXYGEN; PEROVSKITE; PRESSURE EFFECTS; STOICHIOMETRY; STRONTIUM COMPOUNDS;

OXYGEN VACANCIES; STRONTIUM TITANATE;

DIELECTRIC FILMS;

EID: 0032023443     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004333911324     Document Type: Article

References (13)

1. D. ROY and S. B. KRUPANIDHI, Appl. Phys. Lett. 62 (1993) 1056.
2. R. MOAZZAMI, C. HU and W. H. SHEPHERD, IEEE Trans. Electr. Devices 39 (1992) 2044.
3. T. KUROIWA, T. HONDA, H. WATARAI and K. SATO, Jpn J. Appl. Phys. 31 (1992) 3025.
4. H. Y. LEE, K. C. LEE, J. N. SCHUNKE and L. C. BURTON, IEEE Trans. Comp. Hybrids Manuf. Technol CHMT-7 (1984) 443.
5. C. SUDHAMA, A. C. CAMPBELL, P. D. MANIAR, R. E. JONES, R. MOAZZAMI and C. J. MOGAB, J. Appl. Phys. 75 (1994) 1014.
6. R. WASER, J. Amer. Ceram. Soc. 74 (1991) 1934.
7. I. BURN, S. M. NEIRMAN, N. E. CIPOLLINI, J. Mater. Sci. Lett. 4 (1985) 1152.
8. Z. JI-PIN, Z. MEI-YU and W. HONG, Ceram. Int. 16 (1990) 85.
9. D. DIMOS, R. W. SCHWARTZ and S. J. LOCKWOOD, J. Amer. Ceram. Soc. 77 (1994) 3000.
10. D. K. LIANG, ibid. 76 (1993) 2023.
11. T. HIRANO, M. TAGA, and T. KOBAYASHI, Jpn J. Appl. Phys. 32 (1993) L1760.
12. YUHUAN XU, "Ferroelectric materials and their application", (North-Holland, Amsterdam, 1991).
13. G. E. DIETER, "Mechanical metallurgy", 3rd edition (McGraw-Hill, 1986) p. 203.