Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition

Journal of Crystal Growth

Volumn 312, Issue 24, 2010, Pages 3588-3591

  Park, Jae Young ^a   Je, Jung Ho ^b   Kim, Sang Sub ^a  

^a Inha University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

A1. X ray diffraction; A3. Laser epitaxy; B1. Zinc compounds; B2. Semiconducting IIVI materials; B3. Light emitting diodes

Indexed keywords

A3. LASER EPITAXY; B1. ZINC COMPOUNDS; BASAL PLANES; HETEROEPITAXIAL; IN-PLANE DIRECTION; OUT-OF-PLANE DIRECTION; SEMICONDUCTING II-VI MATERIALS; SYNCHROTRON X RAY DIFFRACTION; TWO DOMAINS; VARIOUS SUBSTRATES; WELL-ALIGNED; ZNO FILMS;

ALUMINUM; DIFFRACTION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLIC FILMS; PULSED LASER DEPOSITION; SYNCHROTRON RADIATION; SYNCHROTRONS; TRANSITION METAL COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS; ZINC; ZINC OXIDE;

PULSED LASERS;

EID: 78149279894     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.034     Document Type: Article

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