Effect of strain and variable mass on the formation of antibonding hole ground states in InAs quantum dot molecules

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 15, 2010, Pages

  Planelles, J ^a   Climente, J I ^a   Rajadell, F ^a   Doty, M F ^b   Bracker, A S ^c   Gammon, D ^c  

^a UNIVERSITAT JAUME I   (Spain)

^b UNIVERSITY OF DELAWARE   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78149265175     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.155307     Document Type: Article

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