Bonding-antibonding ground-state transition in coupled Ge/Si quantum dots

Semiconductor Science and Technology

Volumn 24, Issue 9, 2009, Pages

  Yakimov, A I ^a   Bloshkin, A A ^a   Dvurechenskii, A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIBONDING; ANTIBONDING ORBITAL; BAND MODEL; DIATOMIC MOLECULES; DOUBLE QUANTUM DOTS; ELASTIC STRAIN; HOLE STATE; MOLECULAR GROUND STATE; QUANTUM DOT; QUANTUM DOT MOLECULES; SINGLE-PARTICLE; SPIN ORBIT INTERACTIONS;

GROUND STATE; SEMICONDUCTING GERMANIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 68949149015     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/9/095002     Document Type: Article

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