Coupling and strain effects in vertically stacked double InAs/GaAs quantum dots: Tight-binding approach

Acta Physica Polonica A

Volumn 106, Issue 2, 2004, Pages 193-205

  Jaskolski W ^a   Zielinski M ^a   Bryant, G W ^b  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; GROUND STATE; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SYNTHESIS (CHEMICAL);

ANTIBONDING; ATOMISTIC COUPLINGS; ELECTRONIC COUPLINGS; HOLE STATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4644238306     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.106.193     Document Type: Conference Paper

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