Antibonding ground states in InAs quantum-dot molecules

Physical Review Letters

Volumn 102, Issue 4, 2009, Pages

  Doty, M F ^a,d   Climente, J I ^b   Korkusinski, M ^c   Scheibner, M ^a   Bracker, A S ^a   Hawrylak, P ^c   Gammon, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b CNR Consiglio Nazionale delle Ricerche   (Italy)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; INDIUM ARSENIDE; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM;

ANTI BONDINGS; ANTIBONDING ORBITALS; ATOMISTIC CALCULATIONS; BONDING ORBITALS; COHERENT TUNNELING; INAS; INAS QUANTUM DOTS; MAGNETO PHOTOLUMINESCENCES; MOLECULAR GROUND STATE; MOLECULAR STATE; P MODELS; QUANTUM-DOT MOLECULES; SPIN-ORBIT INTERACTIONS; THEORETICAL PREDICTIONS; THIN BARRIERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 60349092052     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.047401     Document Type: Article

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