Linear characteristics of a metalinsulator transition voltage and oscillation frequency in VO2 devices

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1314-1316

  Kim, Bong Jun ^a   Seo, Giwan ^b   Lee, Yong Wook ^c   Choi, Sungyoul ^a   Kim, Hyun Tak ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Pukyong National University   (South Korea)

Author keywords

Linear; metalinsulator transition (MIT); oscillation; temperature sensor

Indexed keywords

JOULE HEAT; LINEAR; LINEAR CHARACTERISTICS; OSCILLATION; OSCILLATION FREQUENCY; PULSE VOLTAGE;

TEMPERATURE SENSORS;

EID: 78049252746     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2068275     Document Type: Article

References (19)

1. 2-based two-and three-terminal devices," New J. Phys., vol. 6, no. 1, p. 52, May 2004.
2. 2 revealed by infrared spectroscopy and nano-imaging," Science, vol. 318, no. 5857, pp. 1750-1753, Dec. 2007.
3. J. Wei, Z. Wang, W. Chen, and D. H. Cobden, "New aspects of the metal-insulator transition in single-domain vanadium dioxide nanobeams," Nat. Nanotechnol., vol. 4, no. 7, pp. 420-424, Jul. 2009.
4. D. Ruzmetov, S. D. Senanayake, and S. Ramanathan, "X-ray absorption spectroscopy of vanadium dioxide thin films across the phase-transition boundary," Phys. Rev. B, Condens. Matter, vol. 75, no. 19, p. 195 162, May 2007.
5. J. M. Baik, M. H. Kim, C. Larson, C. T. Yavuz, G. D. Stucky, A. M. Wodtke, and M. Moskovits, "Pd-sensitized single vanadium oxide nanowires: Highly responsive hydrogen sensing based on the metal-insulator transition," Nano Lett., vol. 9, no. 12, pp. 3980-3984, Nov. 2009.
6. 2 nanowire thermistor," Nano Lett., vol. 9, no. 6, pp. 2322-2326, May 2009.
7. 2 and programmable critical temperature sensor," Appl. Phys. Lett., vol. 90, no. 2, p. 023 515, Jan. 2007.
8. Y. W. Lee, B. J. Kim, S. Choi, H. T. Kim, and G. Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film," Opt. Express, vol. 15, no. 19, pp. 12 108-12 113, Sep. 2007.
9. E. Li, X. Wang, and C. Zhang, "Fiber-optic temperature sensor based on interference of selective higher-order modes," Appl. Phys. Lett., vol. 89, no. 9, p. 091 119, Aug. 2006.
10. S. Jung, T. Ji, and V. K. Varadan, "Temperature sensor using thermal transport properties in the subthreshold regime of an organic thin film transistor," Appl. Phys. Lett., vol. 90, no. 6, p. 062 105, Feb. 2007.
11. L. Liu, S. Peng, W. Wen, and P. Sheng, "Micro thermoindicators and optical-electronic temperature control for microfluidic applications," Appl. Phys. Lett., vol. 91, no. 9, p. 093 513, Aug. 2007.
12. A. M. Zaitsev, A. M. Levine, and S. H. Zaidi, "Carbon nanowire-based temperature sensor," Phys. Stat. Sol. (A), vol. 204, no. 10, pp. 3574-3579, Sep. 2007.
13. M. A. Hopcroft, B. Kim, S. Chandorkar, R. Melamud, M. Agarwal, C. M. Jha, G. Bahl, J. Salvia, H. Mehta, H. K. Lee, R. N. Candler, and T. W. Kenny, "Using the temperature dependence of resonator quality factor as a thermometer," Appl. Phys. Lett., vol. 91, no. 1, p. 013 505, Jul. 2007.
14. C. Ko and S. Ramanathan, "Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry," Appl. Phys. Lett., vol. 93, no. 25, p. 252 101, Dec. 2008.
15. Y. W. Lee, B. J. Kim, J. W. Lim, S. J. Yun, S. Choi, B. G. Chae, G. Kim, and H. T. Kim, "Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film," Appl. Phys. Lett., vol. 92, no. 16, p. 162 903, Apr. 2008.
16. 2 planer-type junctions with infinite negative differential resistance," J. Appl. Phys., vol. 103, no. 10, p. 103 708, May 2008.
17. 2," Appl. Phys. Lett., vol. 92, no. 24, p. 241 906, Jun. 2008.
18. N. F. Mott, Metal-Insulator Transitions, 2nd ed. Boca Raton, FL: CRC Press, 1990.
19. 2 devices: Electric field versus thermal effects," J. Mater. Sci., vol. 44, no. 19, p. 5345, Apr. 2009.