Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film

Optics Express

Volumn 15, Issue 19, 2007, Pages 12108-12113

  Lee, Yong Wook ^a   Kim, Bong Jun ^a   Choi, Sungyoul ^a   Kim, Hyun Tak ^a   Kim, Gyungock ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED RADIATION; PHASE TRANSITIONS; THRESHOLD VOLTAGE; VANADIUM COMPOUNDS;

ELECTRIC GATING; GATE TERMINAL; LIGHT INTENSITY; VANADIUM DIOXIDE;

THIN FILMS;

EID: 34748903114     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.012108     Document Type: Article

References (16)

1. 2 thin film," Appl. Surf. Sci. 252, 5512-5515 (2006).
2. S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, and C. Ke, "Optical, switch based on vanadium dioxide thin films," Infrared Phys. Tech. 45, 239-242 (2004).
3. M. A. Richardson and J. A. Coath, "Infrared optical modulators for missile testing," Optic. Laser Tech. 30, 137-140 (1998).
4. V. Yu. Zerov, Yu. V. Kulikov, V. N. Leonov, V. G. Malyarov, I. A. Khrebtov, and I. I. Shaganov, "Features of the operation of a bolometer based on a vanadium dioxide film in a temperature interval that includes a phase transition," J. Opt. Technol. 66, 387-390 (1999).
5. 2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sensor. Actuator. Phys. 115, 28-31 (2004).
6. F. J. Morin, "Oxides which show a metal-to-insulator transition at the neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).
7. 2 and programmable critical temperature sensor," Appl. Phys. Lett. 90, 023515(1-3) (2007).
8. 3," Phys. Rev. Lett. 23, 1384-1387 (1969).
9. 2," Phys. Rev. Lett. 98, 196406(1-4) (2007).
10. 2 during an ultrafast solid-solid phase transition," Phys. Rev. Lett. 87, 237401(1-4) (2001).
11. 2: A view from the ultrafast timescale," Phys. Rev. B 70, 161102(1-4) (2004).
12. 2-based two- and three-terminal devices," New J. Phys. 6, 52-70 (2004).
13. x thin film prepared by rapid-thermal-annealing," Thin Solid Films 495, 375-379 (2006).
14. F. Sawano, I. Terasaki, H. Mori, T. Mori, M. Watanabe, N. Ikeda, Y. Nogami, and Y. Noda, "An organic thyristor," Nature 437, 522-524 (2005).
15. 2 as evidence of the Mott transition: coherent phonon analysis," Phys. Rev. Lett. 97, 266401(1-4) (2006).
16. R. F. Carson, R. C. Hughes, T. E. Zipperian, H. T. Weaver, T. M. Brennan, B. E. Hammons, and J. F. Klem, "High-voltage, wavelength-discriminating, light-activated GaAs thyristor," Electron. Lett. 25, 1592-1593 (1989).