Gallium-assisted growth of silicon nanowires by electron cyclotron resonance plasmas

Nanotechnology

Volumn 21, Issue 45, 2010, Pages

  Cervera, M ^a   Ruiz, E ^a   Pau, J L ^a   Piqueras, J ^a   Avella, M ^b   Jimenez J ^b   Hernandez M J ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL GROWTH; DROPLET SIZES; ELECTRON CYCLOTRON RESONANCE PLASMA; EVAPORATION TIME; GROWTH CONDITIONS; RADIAL GROWTH; SI NANOWIRE; SILICON NANOWIRES;

DROP FORMATION; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; GALLIUM; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; SURFACE PLASMON RESONANCE;

CYCLOTRONS;

EID: 77958578732     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/45/455602     Document Type: Article

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