Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals

Applied Physics Letters

Volumn 97, Issue 16, 2010, Pages

  Kumar, A ^a   Prakash, J ^b   Khan, Mohd Taukeer ^a   Dhawan, S K ^a   Biradar, A M ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CDTE; CHARGE STORAGE; DC BIAS; DOPING CONCENTRATION; ELECTRO-OPTICAL; FERROELECTRIC LIQUID CRYSTAL; MEMORY EFFECTS; QUANTUM DOT; SAMPLE CELL;

CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CADMIUM TELLURIDE; CRYSTALS; DOPING (ADDITIVES); FERROELECTRICITY; LIQUID CRYSTALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958496562     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3495780     Document Type: Article

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