Memory effect in a junction-like CdS nanocomposite/conducting polymer poly[2-methoxy-5-(2-ethylhexyloxy)1,4-phenylene-vinylene] heterostructure

Nanotechnology

Volumn 19, Issue 21, 2008, Pages

  Mondal, S P ^a   Reddy, V S ^a   Das, S ^a   Dhar, A ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CONDUCTING POLYMERS; HETEROJUNCTIONS; NANOCOMPOSITES; NONVOLATILE STORAGE; POLYMER MATRIX;

CAPACITANCE-VOLTAGE CHARACTERISTICS; MEMORY EFFECTS; NONVOLATILE MEMORY DEVICES;

DATA STORAGE EQUIPMENT;

CADMIUM SULFIDE; INDIUM; NANOCOMPOSITE; POLY[2 METHOXY 5 (2 ETHYLHEXYLOXY) 1,4 PHENYLENE VINYLENE]; POLYMER; POLYVINYL ALCOHOL;

ARTICLE; HYSTERESIS; NANOTECHNOLOGY; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 43249115349     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/21/215306     Document Type: Article

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