Multiscale three-dimensional simulations of charge gain and transport in diamond

Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

  Dimitrov, D A ^a   Busby, R ^a   Cary, J R ^a   Ben Zvi, I ^b   Rao, T ^b   Smedley, J ^b   Chang, X ^b   Keister, J W ^b   Wu, Q ^b   Muller, E ^b  

^a TECH X CORPORATION   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; CHARGE GAIN; CHARGE TRANSPORT; COLLECTION EFFICIENCY; COMPUTATIONAL FRAMEWORK; ELECTRON HOLE PAIRS; ELECTRONS AND HOLES; EXPERIMENTAL DATA; HIGH BRIGHTNESS; HIGH-CURRENT; IMPURITY SCATTERING; INTEGRATED MODELING; MULTISCALES; PHYSICAL PROCESS; PRIMARY ELECTRONS; SECONDARY ELECTRONS; SIMULATION RESULT; THERMAL EMITTANCE; THREE DIMENSIONAL SIMULATIONS; TIME-SCALES; TRANSMISSION MODE;

DIAMONDS; ELECTRIC FIELDS; ELECTRON BEAMS; THREE DIMENSIONAL COMPUTER GRAPHICS;

ELECTRONS;

EID: 77958163559     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3491041     Document Type: Article

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