Charge collection and propagation in diamond X-ray detectors

IEEE Transactions on Nuclear Science

Volumn 57, Issue 4 PART 2, 2010, Pages 2400-2404

  Keister, Jeffrey W ^a   Smedley, John ^a   Dimitrov, Dimitre ^b   Busby, Richard ^b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b TECH X CORPORATION   (United States)

Author keywords

Charge carrier processes; diamond; photoconductivity; wide band gap semiconductors; x ray detectors

Indexed keywords

APPLIED FIELD; BAND GAPS; BIASING SCHEME; BLOCKING CONTACTS; CHARGE CARRIER PROCESS; CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY; CHARGE PROPAGATION; DE-TRAPPING; DETECTOR DEVICES; DIAMOND DIODES; ENTRANCE WINDOW; HIGH HEAT LOAD; HIGH THERMAL CONDUCTIVITY; LOW COEFFICIENT OF THERMAL EXPANSIONS; MATERIAL STRENGTH; MONTE CARLO SIMULATION; PARTICLE ENERGY; PHOTOCONDUCTIVE GAINS; PHOTON ENERGY; RECOMBINATION LOSS; SINGLE CRYSTAL DIAMOND; STATE OF THE ART; THERMAL DE-TRAPPING; VISIBLE LIGHT; WAVE FORMS; WIDE-BAND-GAP SEMICONDUCTOR; WINDOW LAYER; X-RAY DETECTOR; X-RAY SCIENCE; X-RAY TRANSMISSION;

CHARGE CARRIERS; CHARGE TRAPPING; COMPUTER SIMULATION; CONVERSION EFFICIENCY; DETECTORS; ENERGY CONVERSION; ENERGY GAP; MONTE CARLO METHODS; PHOTOCONDUCTIVITY; PHOTONS; SINGLE CRYSTALS; THERMAL EXPANSION; X RAY APPARATUS; X RAYS;

DIAMONDS;

EID: 77955800430     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2052288     Document Type: Article

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