High voltage vs. high integration: A comparison between CMOS technologies for SPAD cameras

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7780, Issue , 2010, Pages

  Arbat, A ^a   Comerma, A ^a   Trenado, J ^a   Gascon, D ^a   Vila A ^a   Garrido, L ^a   Dieguez, A ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Avalanche photodiodes; Single photon camera; Technologies comparison

Indexed keywords

3D IMAGING; AFTERPULSING; BIOAPPLICATIONS; CMOS TECHNOLOGY; DARK COUNTS; ENERGETIC PARTICLES; HIGH FILL FACTORS; HIGH VOLTAGE; HIGH VOLTAGE TECHNOLOGY; INTEGRATION DENSITY; INTEGRATION TECHNOLOGIES; INTRINSIC PROCESS; LOW FREQUENCY; M-TECHNOLOGIES; NOISE EFFECTS; NOISE FREQUENCIES; OPTICAL APPLICATIONS; POST PROCESSING; QUENCHING TIME; SINGLE PHOTONS; STANDARD CMOS TECHNOLOGY; TIME RESPONSE;

AVALANCHE PHOTODIODES; CAMERAS; CMOS INTEGRATED CIRCUITS; FOCUSING; IMAGING TECHNIQUES; INTEGRATION; PARTICLE BEAMS; PHOTODIODES; PHOTONS;

TECHNOLOGY;

EID: 77958040844     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.860482     Document Type: Conference Paper

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