Growth of multi-stacked InAs/GaNAs quantum dots grown with As2 source in atomic hydrogen-assisted molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2745-2748

  Takata, Ayami ^a,b,d   Oshima, Ryuji ^a,b   Shoji, Yasushi ^b,c   Akahane, Kouichi ^b,d   Okada, Yoshitaka ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Molecular beam epitaxy; Quantum dots; Strain compensation

Indexed keywords

ATOMIC HYDROGEN; BIMODAL SIZE DISTRIBUTION; DEPOSITION THICKNESS; GAAS; HIGH-DENSITY; INAS; INAS QUANTUM DOTS; INITIAL STAGES; NARROW-LINE WIDTH; PL PROPERTY; QUANTUM DOT; SELF ASSEMBLY PROCESS; SIZE FLUCTUATIONS;

ASPECT RATIO; EPITAXIAL GROWTH; GALLIUM ALLOYS; HYDROGEN; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; SEMICONDUCTING INDIUM; SIZE DETERMINATION; SIZE DISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958011078     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.01.019     Document Type: Conference Paper

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