Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (3 1 1)B by molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1770-1773

  Oshima, Ryuji ^a   Shoji, Yasushi ^b   Takata, Ayami ^a,b   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; FOURIER ANALYSIS; GALLIUM NITRIDE; HYDROGEN; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

A1. LOW-DIMENSIONAL STRUCTURES; A3. MOLECULAR BEAM EPITAXY; ATOMIC HYDROGENS; B2. SEMICONDUCTING III-V MATERIALS; DILUTE NITRIDES; FAST FOURIER TRANSFORMATIONS; GAAS; ORDERED STRUCTURES; PHOTOLUMINESCENCE SPECTRUM; QUANTUM DOT SUPERLATTICES; QUANTUM DOTS; RADIO FREQUENCIES; SELF-ORGANIZED; STACKED LAYERS; STRAIN-COMPENSATED; STRUCTURAL AND OPTICAL PROPERTIES; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; TWO-DIMENSIONAL;

GALLIUM ALLOYS;

EID: 63349092421     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.108     Document Type: Article

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