-
1
-
-
34547254841
-
A comprehensive study on the soft-error rate of flip-flops from 90-nm production libraries
-
March
-
T. Heijmen, P. Roche, G. Gasiot, K. R. Forbes and D. Giot, "A Comprehensive Study on the Soft-Error Rate of Flip-flops from 90-nm Production Libraries," IEEE Trans. Device and Materials Reliability, Vol. 7, No. 1, March 2007
-
(2007)
IEEE Trans. Device and Materials Reliability
, vol.7
, Issue.1
-
-
Heijmen, T.1
Roche, P.2
Gasiot, G.3
Forbes, K.R.4
Giot, D.5
-
2
-
-
69649104165
-
An analytical model for soft error critical charge of nanometric SRAMs
-
September
-
S.M. Jahinuzzaman, M. Sharifkhani and M. Sachdev, "An Analytical Model for Soft Error Critical Charge of Nanometric SRAMs," IEEE Trans. VLSI Systems, Vol. 17, No. 9, September 2009
-
(2009)
IEEE Trans. VLSI Systems
, vol.17
, Issue.9
-
-
Jahinuzzaman, S.M.1
Sharifkhani, M.2
Sachdev, M.3
-
3
-
-
33144489763
-
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design
-
December
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B. D. Olson, D. R. Ball, K. M. Warren, L. W. Massengill, N. F. Haddad, S. E. Doyle and D. McMorrow, "Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design," IEEE Trans. Nucl. Sci., Vol. 52, no. 6, pp. 2135-2136, December 2005
-
(2005)
IEEE Trans. Nucl. Sci.
, vol.52
, Issue.6
, pp. 2135-2136
-
-
Olson, B.D.1
Ball, D.R.2
Warren, K.M.3
Massengill, L.W.4
Haddad, N.F.5
Doyle, S.E.6
McMorrow, D.7
-
4
-
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33846288275
-
Charge collection and charge sharing in a 130 nm CMOS technology
-
December
-
O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black and R. D. Schrimpf, "Charge collection and charge sharing in a 130 nm CMOS technology," IEEE Trans. Nucl. Sci., Vol. 53, no. 6, pp. 3253-3258, December 2006
-
(2006)
IEEE Trans. Nucl. Sci.
, vol.53
, Issue.6
, pp. 3253-3258
-
-
Amusan, O.A.1
Witulski, A.F.2
Massengill, L.W.3
Bhuva, B.L.4
Fleming, P.R.5
Alles, M.L.6
Sternberg, A.L.7
Black, J.D.8
Schrimpf, R.D.9
-
6
-
-
0030375853
-
Upset hardened memory design for submicron CMOS technology
-
Dec. B
-
T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron CMOS technology," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2874-2878, Dec. 1996. B
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, Issue.6
, pp. 2874-2878
-
-
Calin, T.1
Nicolaidis, M.2
Velazco, R.3
-
7
-
-
54949096192
-
Single event upsets in deep-submicrometer technologies due to charge sharing
-
September
-
O. A. Amusan, L. W. Massengill, M. P. Baze, A. L. Sternberg, A. F. Witulski, B. L. Bhuva and J. D. Black, "Single event upsets in deep-submicrometer technologies due to charge sharing," IEEE Trans. Device and Materials Reliability, vol. 8, no. 3, pp. 582-589, September 2008
-
(2008)
IEEE Trans. Device and Materials Reliability
, vol.8
, Issue.3
, pp. 582-589
-
-
Amusan, O.A.1
Massengill, L.W.2
Baze, M.P.3
Sternberg, A.L.4
Witulski, A.F.5
Bhuva, B.L.6
Black, J.D.7
-
8
-
-
77955777200
-
-
Accepted For Publication In IEEE Trans. Nuc. Sci.
-
R. A. Weller, M. H. Mendenhall, R. A. Reed, R. D. Schrimpf, K. M. Warren, B. D. Sierawski, and L. W. Massengill, "Monte Carlo Simulation of Single Event Effects," Accepted for publication in IEEE Trans. Nuc. Sci. 2010
-
(2010)
Monte Carlo Simulation of Single Event Effects
-
-
Weller, R.A.1
Mendenhall, M.H.2
Reed, R.A.3
Schrimpf, R.D.4
Warren, K.M.5
Sierawski, B.D.6
Massengill, L.W.7
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