High-Q integrated CMOS-MEMS resonators with Deep-submicron gaps

2010 IEEE International Frequency Control Symposium, FCS 2010

Volumn , Issue , 2010, Pages 340-343

  Chen, Wen Chien ^a   Li, Ming Huang ^a   Fang, Weileun ^a   Li, Sheng Shian ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS AMPLIFIERS; CMOS-MEMS; DEEP SUB-MICRON; DIE AREA; DIRECT MEASUREMENT; ENHANCED TRANSMISSION; FREE-FREE BEAM; FREQUENCY VARIATION; GAP SPACING; MECHANICAL BOUNDARIES; MINIMUM FEATURE SIZES; MONOLITHICALLY INTEGRATED; MOTIONAL IMPEDANCE; PULL-IN; READOUT CIRCUITRY; RESONANCE FREQUENCIES; SINGLE-CHIP;

BOUNDARY CONDITIONS; MICROELECTROMECHANICAL DEVICES; MONOLITHIC INTEGRATED CIRCUITS; RESONANCE;

RESONATORS;

EID: 77957865433     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/FREQ.2010.5556316     Document Type: Conference Paper

References (5)

1. C. T.-C. Nguyen, "MEMS technology for timing and frequency control," IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 54, no. 2, pp. 251-270, Feb, 2007.
2. C.-C. Lo, F. Chen, and G. K. Fedder, "Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism," Tech. Digest, Transducers'05, Seoul, Korea, pp. 2074-2077, June, 2005.
3. J. Teva, et al., "From VHF to UHF CMOS-MEMS monolithically integrated resonators," IEEE International Conference on Microelectromechanical Systems (MEMS 2008), Tucson, Arizona, USA, pp. 82-85, Jan, 2008.
4. W.-C. Chen, C.-S. Chen, K.-A. Wen, L.-S. Fan, W. Fang, and S.-S. Li, "A generalized foundry CMOS platform for capacitively-transduced resonators monolithically integrated with amplifiers," IEEE International Conference on Microelectromechanical Systems (MEMS 2010), HongKong, pp. 204-207, Jan, 2010.
5. W.-C. Chen, M.-H. Li, W. Fang, and S.-S. Li, "Realizing deepsubmicron gap spacing for CMOS-MEMS resonators with frequency tuning capability via modulated boundary conditions," IEEE International Conference on Microelectromechanical Systems (MEMS 2010), HongKong, pp. 735-738, Jan, 2010.