Realizing deep-submicron gap spacing for CMOS-MEMS resonators with frequency tuning capability via modulated boundary conditions

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2010, Pages 735-738

  Chen, Wen Chien ^a   Li, Ming Huang ^a   Fang, Weileun ^a   Li, Sheng Shian ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS-MEMS; DC BIAS; DEEP SUB-MICRON; FREQUENCY SHIFT; FREQUENCY VARIATION; FREQUENCY-TUNING; GAP SPACING; MECHANICAL BOUNDARIES; MOTIONAL IMPEDANCE; PULL IN EFFECTS; PULL-IN; TUNING MECHANISM;

BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; MECHANICAL ENGINEERING; MECHANICS; MICROELECTROMECHANICAL DEVICES; REACTIVE ION ETCHING; STIFFNESS; TUNING;

RESONATORS;

EID: 77952758508     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442301     Document Type: Conference Paper

References (8)

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