Effects of the front surface field in n-type interdigitated back contact silicon heterojunctions solar cells

Energy Procedia

Volumn 2, Issue 1, 2010, Pages 59-64

  Diouf, D ^a   Kleider, J P ^a   Desrues, T ^b   Ribeyron, P J ^b  

^a UNIV PARIS SUD   (France)

^b CEA GRENOBLE   (France)

Author keywords

Hydrogenated amorphous silicon; Modelling; Rear contact; Silicon heterojunctions

Indexed keywords

ACCUMULATION LAYERS; CELL PERFORMANCE; CRITICAL FACTORS; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICONS; DOPED LAYERS; FRONT SURFACES; HYDROGENATED AMORPHOUS SILICON; INTERDIGITATED BACK CONTACTS; INTERFACE QUALITY; LATERAL CURRENTS; LATERAL RESISTANCE; MODELLING; NUMERICAL MODELLING; POSITIVE EFFECTS; REAR CONTACT; SILICON HETEROJUNCTIONS; SURFACE RECOMBINATION VELOCITIES;

CRYSTALLINE MATERIALS; HETEROJUNCTIONS; HYDROGENATION; PASSIVATION; PHOTOVOLTAIC EFFECTS; SOLAR CELLS; TWO DIMENSIONAL;

AMORPHOUS SILICON;

EID: 77957792724     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2010.07.011     Document Type: Conference Paper

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