Reliable GaN HEMTS for high frequency applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1218-1221

  Heying, Ben ^a   Luo, Wen Ben ^a   Smorchkova, Ioulia ^a   Din, Salah ^a   Wojtowicz, Mike ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

FETs; Gallium nitride; Power amplifiers; Reliability; V band

Indexed keywords

ACCELERATED LIFE TESTS; ASSOCIATED GAIN; CW OPERATION; DRAIN BIAS; FETS; GAN HEMTS; GATE PROCESS; HIGH FREQUENCY; HIGH-FREQUENCY APPLICATIONS; JUNCTION TEMPERATURES; MEAN TIME TO FAILURE; OUTPUT POWER; OUTPUT POWER DENSITY; POWER DENSITIES; POWER-ADDED-EFFICIENCY; TOTAL POWER; V-BAND;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; POWER AMPLIFIERS; RELIABILITY; TESTING;

GALLIUM ALLOYS;

EID: 77957787592     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5517568     Document Type: Conference Paper

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