V-Band High-Efficiency Monolithic Pseudomorphic HEMT Power Amplifiers

IEEE Microwave and Guided Wave Letters

Volumn 2, Issue 10, 1992, Pages 394-396

  Pao, C K ^a   Lan, G L ^a   Wu, C S ^a   Igawa, A ^a   Hu, M ^a   Chen, J C ^a   Shih, Y C ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; POWER AMPLIFIERS;

MMIC AMPLIFIERS; PSEUDOMORPHIC HEMT; V-BAND MONOLITHIC POWER AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0026940964     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.160118     Document Type: Article

References (3)

1. P. Saunier and H. Q. Tserng, “AlGaAs-InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2231–2235, Oct. 1989.
2. P. M. Smith et. al., “A 0.15-μm gate length pseudomorphic HEMT,” IEEE MTT-S Int. Symp. Dig., 1989, pp. 983–986.
3. K. L. Tan et al., “High-power V-band pseudomorphic InGaAs HEMT,” IEEE Electron Device Lett., vol. 12, May 1991.