A high efficiency broadband monolithic gallium nitride distributed power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 307-310

  Xie, Chenggang ^a   Pavio, Jeanne ^a   Griffey, David A ^a   Hanson, Allen ^b   Singhal, Sameer ^b  

^a ROCKWELL COLLINS   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

Broadband power amplifier; Distributed power amplifier; GaN Si HEMT

Indexed keywords

BROADBAND POWER AMPLIFIER; DISTRIBUTED POWER AMPLIFIER; DISTRIBUTED POWER AMPLIFIERS; GAN/SI HEMT; HIGH EFFICIENCIES; INPUT/OUTPUT; OUTPUT POWERS; POWER ADDED EFFICIENCIES; RETURN LOSSES;

GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; MICROWAVE CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NITRIDES; POWER AMPLIFIERS; POWER TRANSMISSION; SEMICONDUCTING GALLIUM; SILICON; TELECOMMUNICATION SYSTEMS;

BROADBAND AMPLIFIERS;

EID: 57349152421     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633164     Document Type: Conference Paper

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