|
Volumn 519, Issue 1, 2010, Pages 378-384
|
Lattice and internal relaxation of ZnO thin film under in-plane strain
|
Author keywords
Electronic properties; First principles calculations; Relaxation; Strain; Wide bandgap semiconductor
|
Indexed keywords
AB INITIO;
BAND GAPS;
DENSITY-FUNCTIONAL CALCULATIONS;
ELASTIC STRAIN ENERGY;
ENERGETIC STABILITY;
FIRST-PRINCIPLES CALCULATION;
FREE RELAXATION;
IN-PLANE STRAINS;
JOINT MECHANISM;
LATTICE RELAXATION;
PIEZO-ELECTRIC EFFECTS;
RELAXATION;
SPACE-GROUP SYMMETRY;
STABLE STRUCTURES;
WIDE-BAND-GAP SEMICONDUCTOR;
ZNO THIN FILM;
ELASTIC DEFORMATION;
ENERGY GAP;
METALLIC FILMS;
OPTICAL FILMS;
PIEZOELECTRICITY;
POISSON DISTRIBUTION;
POISSON RATIO;
RESIDUAL STRESSES;
STRAIN ENERGY;
THIN FILMS;
ZINC OXIDE;
ELECTRONIC PROPERTIES;
|
EID: 77957716542
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.08.008 Document Type: Article |
Times cited : (14)
|
References (49)
|