메뉴 건너뛰기




Volumn 519, Issue 1, 2010, Pages 378-384

Lattice and internal relaxation of ZnO thin film under in-plane strain

Author keywords

Electronic properties; First principles calculations; Relaxation; Strain; Wide bandgap semiconductor

Indexed keywords

AB INITIO; BAND GAPS; DENSITY-FUNCTIONAL CALCULATIONS; ELASTIC STRAIN ENERGY; ENERGETIC STABILITY; FIRST-PRINCIPLES CALCULATION; FREE RELAXATION; IN-PLANE STRAINS; JOINT MECHANISM; LATTICE RELAXATION; PIEZO-ELECTRIC EFFECTS; RELAXATION; SPACE-GROUP SYMMETRY; STABLE STRUCTURES; WIDE-BAND-GAP SEMICONDUCTOR; ZNO THIN FILM;

EID: 77957716542     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.008     Document Type: Article
Times cited : (14)

References (49)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.