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Volumn 82, Issue 7, 2010, Pages

Electrically induced n-i-p junctions in multiple graphene layer structures

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EID: 77957591897     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.075419     Document Type: Article
Times cited : (28)

References (24)
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    • Cheianov, V.V.1    Fal'Ko, V.I.2
  • 2
    • 41449114440 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.100.116804
    • L. M. Zhang and M. M. Fogler, Phys. Rev. Lett. 100, 116804 (2008). 10.1103/PhysRevLett.100.116804
    • (2008) Phys. Rev. Lett. , vol.100 , pp. 116804
    • Zhang, L.M.1    Fogler, M.M.2
  • 8
    • 67650142125 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.79.245311
    • V. Ryzhii and M. Ryzhii, Phys. Rev. B 79, 245311 (2009). 10.1103/PhysRevB.79.245311
    • (2009) Phys. Rev. B , vol.79 , pp. 245311
    • Ryzhii, V.1    Ryzhii, M.2
  • 19
    • 36549091403 scopus 로고
    • 10.1063/1.99649;
    • S. Luryi, Appl. Phys. Lett. 52, 501 (1988) 10.1063/1.99649
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 501
    • Luryi, S.1
  • 20
    • 0002413884 scopus 로고
    • see also, in edited by S. M. Sze (Wiley, New York
    • see also S. Luryi, in High-Speed Semiconductor Devices, edited by, S. M. Sze, (Wiley, New York, 1990), p. 57.
    • (1990) High-Speed Semiconductor Devices , pp. 57
    • Luryi, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.