Amorphous SixC1-x:H single layers before and after thermal annealing: Correlating optical and structural properties

Solar Energy Materials and Solar Cells

Volumn 94, Issue 11, 2010, Pages 1942-1946

  Hartel, Andreas M ^a   Kunle M ^b   Loper P ^b   Janz, S ^b   Bett, A W ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Amorphous materials; Annealing; Nanocrystals; Silicon; Silicon carbide; Single layers

Indexed keywords

ABSORPTION BAND; AMORPHOUS SI; ANALYTICAL TECHNIQUES; BEFORE AND AFTER; CARBON CONTENT; CRYSTALLINE PHASIS; DEPOSITED LAYER; FOURIER TRANSFORM INFRARED SPECTROMETRY; FT-IR INVESTIGATION; FT-IR SPECTRUM; GRAZING-INCIDENCE X-RAY DIFFRACTION; H-PASSIVATION; HYDROGEN PASSIVATION; PL INTENSITY; PL MEASUREMENTS; PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITIONS; QUANTUM CONFINEMENT EFFECTS; SI-C BOND; SINGLE LAYER; THERMAL-ANNEALING; TRANSMITTANCE MEASUREMENTS;

AMORPHOUS FILMS; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROGEN; HYDROGEN BONDS; NANOCRYSTALS; OXYGEN; PASSIVATION; PHOTOLUMINESCENCE SPECTROSCOPY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; STOICHIOMETRY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SILICON;

EID: 77957168882     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.014     Document Type: Article

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